semiconductor in MOSFET

I need MOSFET design.

Use the MOSFET simulator on [login to view URL] ([login to view URL]) to design an n-type MOSFET using the following specifications:

Uniform doping density

Channel length = 22 nm

Oxide thickness ≥ 0.8 nm

S/D length ~ 2×Channel length

Junction depth ~ Channel length

Substrate thickness ~ 40 nm

Device width = 1000 nm

S/D doping concentration = 2×1020 cm-3

Channel doping concentration ≤ 1×1019 cm-3

Substrate doping concentration = 5×1016 cm-3

On the “model” phase, carefully look through the input parameters. Use the following:

Gate type: n+ polysilicon

Activate the following models (set ‘yes’):

Concentration dependent scattering

Vertical field dependent mobility

Parallel field dependence

On the “voltage sweep” phase:

Maximum supply voltage (VG and VD) = 0.8 V

Plot along length = ‘yes’

Plot along depth = ‘yes’

Where to plot 1-D plots along length ≡ 5nm

Where to plot 1-D plots along depth ≡ 55nm

Desired outputs:

Maximum current ≥ 600 μA

Off current (for VG = 0V and VD = 0.8V) ≤ 10 μA

S ≤ 200 mV/dec

Attach the snapshots of IV characteristics and your calculation with the report.


You should be fine-tuning the “oxide thickness” and/or “channel doping density” mainly keeping in mind their (lower/upper) limits. You need to plot two curves for the ID-VGS characteristic for VD = 0.05 and 0.8 V. Also, sweep your gate voltage from -0.5V to 0.8 V (threshold voltage can be negative with n+ polysilicon gates!).

Kemahiran: Elektronik, Kejuruteraan Elektrik, Kejuruteraan, Matlab and Mathematica

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( 1 ulasan ) Carbondale, United States

ID Projek: #22651849

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